Data writing method, memory control circuit unit and memory storage device

• Main Authors: CAI YUEXUAN, LIN QINMIN, LIN ZIYIN
• Format: Patent
• Language: Chinese; English
• Published: 20.03.2018
• Subjects: CALCULATING; COMPUTING; COUNTING; ELECTRIC DIGITAL DATA PROCESSING; INFORMATION STORAGE; PHYSICS; STATIC STORES

The invention provides a data writing method, a memory control circuit unit and a memory storage device. The data writing method comprises the following steps: receiving a first write instruction andfirst data corresponding to the first write instruction, and writing the first data into at least one third entity erasing unit in a first entity erasing unit; and if operating frequency of at least one fourth entity erasing unit in the first entity erasing unit is lower than one preset value, executing data reduction operation corresponding to the first write instruction, so as to duplicate at least one second data stored in at least one fourth entity erasing unit to at least one second enter erasing unit. The data writing method, the memory control circuit unit and the memory storage devicewhich are provided by the invention can improve speed and efficiency of the memory storage device during data write operation. 本发明提供种数据写入方法、存储器控制电路单元及存储器存储装置。本方法包括：接收第写入指令与对应于所述第写入指令的第数据，且将所述第数据写入第实体抹除单元中的至少第三实体抹除单元；以及若所述第实体抹除