Dual-intrinsic Ge barrier layer GeSn alloy PIN photodetector and preparation method thereof

• Main Authors: SONG JIANJUN, XUAN RONGXI, MIAO YUANHAO, ZHANG HEMING, HU HUIYONG, SHU BIN, JIANG DAOFU
• Format: Patent
• Language: Chinese; English
• Published: 09.03.2018
• Subjects: BASIC ELECTRIC ELEMENTS; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

The invention relates to a dual-intrinsic Ge barrier layer GeSn alloy PIN photodetector and a preparation method thereof. The method comprises the steps that a Si substrate is selected; a Ge seed layer grows; a Ge host layer grows; a SiO2 layer grows; the whole substrate material is heated to 700 DEG C; a continuous laser process is used for crystallization; the laser wavelength is 808 nm; the spot size is 10 mm*1 mm; the power is 1.5 kW/cm ; the moving speed is 25 mm/s; a crystallized Ge layer is formed; the SiO2 layer is removed; an N-type Ge layer, an intrinsic Ge barrier layer, an intrinsic GeSn layer, an intrinsic Ge barrier layer, a P-type Ge layer and a Si cap layer continuously grow; a step is etched; a Ni material grows on the surface of the entire substrate; the Ni material isetched; and finally the photodetector is formed. The photodetector is made of a GeSn material, and has the advantages of high speed, high luminous efficiency, wide spectrum response, simple process and excellent device performa