InGaAs material, MOS device provided with InGaAs material-based channel, and preparation method thereof

• Main Authors: SONG JIANJUN, REN YUAN, XUAN RONGXI, ZHANG HEMING, HU HUIYONG, SHU BIN, JIANG DAOFU
• Format: Patent
• Language: Chinese; English
• Published: 09.03.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to an InGaAs material, an MOS device provided with an InGaAs material-based channel, and a preparation method thereof. The method comprises the steps of selecting an Si substrate; growing a first Ge seed crystal layer; growing a second Ge main body layer; heating the whole substrate, and crystallizing the whole substrate by adopting the laser process, wherein the parameters of the laser process are as follows: the wavelength is 808 nm, the size of light spots is 10 mm* 1 mm, the power is 1.5kW/cm2, and the moving speed is 25 mm/s; after cooling, growing the InGaAs material on the Ge/Si virtual substrate material. According to the invention, the dislocation density of the Ge/Si virtual substrate is effectively reduced by adopting the laser re-crystallization (LRC) process, and the quality of the subsequently grown InGaAs material is improved. Meanwhile, the laser re-crystallization process is short in time and low in thermal budget, and the whole-process efficiencyof preparing the InGaAs