Hybrid CMOS device and manufacturing method thereof

• Main Authors: LYU BOYAN, XU YUANJUN, WU YUANJUN, LIU CHUAN, YANG BORU, ZHANG LIANGFEN, REN ZHANGCHUN, CHEN CHANGDONG
• Format: Patent
• Language: Chinese; English
• Published: 06.03.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present invention provides a hybrid CMOS device and a manufacturing method thereof. The manufacturing method of the hybrid CMOS device comprises the steps of: employing low-temperature polycrystalline silicon to prepare an active layer of a PMOS transistor; employing a metal oxide semiconductor to prepare an active layer of an NMOS transistor; and performing mixed usage of the two semiconductor materials to composite a hybrid CMOS device. Compared with a current method for preparing an active layer of a PMOS transistor by employing two-dimensional carbon nano tube materials or organic semiconductor materials, the prepared hybrid CMOS device is better in electrical properties, the first active layer is subjected to hydrotreating in the manufacturing process to improve the electrical properties of the first active layer, and a rapid thermal annealing method is employed in a follow-up process to remove hydrogen pollution in the second active layer so that the second active layer has good electrical propertie