A core-shell-structured semiconductor nanosheet material formed by covering diindium trisulfide with indium phosphide and a preparing method thereof

The invention relates to a core-shell-structured semiconductor nanosheet material formed by covering diindium trisulfide with indium phosphide and a preparing method thereof. A simple one-step hydrothermal method is adopted to firstly synthesize nanosheet diindium trisulfide on an electrically condu...

Full description

Saved in:
Bibliographic Details
Main Authors TIAN YANG, GAO YIXUAN
Format Patent
LanguageChinese
English
Published 02.03.2018
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:The invention relates to a core-shell-structured semiconductor nanosheet material formed by covering diindium trisulfide with indium phosphide and a preparing method thereof. A simple one-step hydrothermal method is adopted to firstly synthesize nanosheet diindium trisulfide on an electrically conductive glass substrate, and then an indium phosphide cover layer is formed on the surface of the nanosheet diindium trisulfide through a phosphorization process. The preparing method is simple, novel, and high in controllability. The semiconductor nanosheet material facilitates separation of photon-generated carriers, increases the photoelectric conversion efficiency, can promote the efficiency of photoelectric water decomposition, and accords with researches on the newest clean energy and sustainable energy. 本发明涉及种磷化铟包覆硫化铟的核壳结构半导体纳米片材料及其制备方法,其中采用简单的步水热法先在导电玻璃基片上合成出纳米片状的硫化铟,然后利用磷化的方法在纳米片状的硫化铟表面形成磷化铟包覆层,所述制备方法简单、新颖、可控性强。合成的磷化铟包覆硫化铟的核壳结构半导体纳米片材料有助于光生载流子分离,增强光电转换效率,可以促进光电分解水的效率,符合最新的清洁能源及其可持续能源方面的研究。
Bibliography:Application Number: CN20171953610