Preparation method of single crystal high Al component AlxGa1-xN ternary alloy nanorod

• Main Authors: SHEN LONGHAI, LYU WEI
• Format: Patent
• Language: Chinese; English
• Published: 16.02.2018
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The invention relates to a preparation method of a single crystal high Al component AlxGa1-xN ternary alloy nanorod. The method includes: firstly preparing a silicon substrate with deposited thin layer aluminum powder having a deposition thickness of 0.5-1.0mm, then spreading metal Al powder flatly at one end of a reaction boat, placing the silicon substrate above the powder, dripping Ga liquid tothe other end of the reaction boat, putting a reaction device into a quartz test tube with one opening end, performing sealing and vacuum pumping; when the vacuum degree is less than or equal to 5Pa,introducing argon to fill the whole atmosphere with argon, then adjusting the argon flow rate, conducting heating to 900-1000DEG C, adjusting the argon flow rate to 40-60sccm, at the same time, introducing ammonia with the same flow rate to argon, keeping the state for 1-3h, and conducting furnace cooling, thus obtaining the high Al component single crystal AlxGa1-xN ternary alloy nanorod, wherein the adjustable range x o