Pressure purge etch method for etching complex 3-D structures

• Main Authors: PILYEON PARK, JOYDEEP GUHA
• Format: Patent
• Language: Chinese; English
• Published: 06.02.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRICITY

The invention relates to a pressure purge etch method for etching complex 3-D structures. A method for etching a substrate and removing byproducts includes a) setting process parameters of a processing chamber for a selective dry etch process; b) setting process pressure of the processing chamber to a first predetermined pressure in a range from 1 Torr to 10 Torr for the selective dry etch process; c) selectively etching a first film material of a substrate relative to a second film material of the substrate in the processing chamber during a first period; d) lowering pressure in the processing chamber to a second predetermined pressure that is less than the first predetermined pressure by a factor greater than or equal to 4; and e) purging the processing chamber at the second predetermined pressure for a second period. 本发明涉及用于蚀刻复合三维结构的压力吹扫蚀刻方法。种用于蚀刻衬底和去除副产物的方法包括：a)设置处理室的处理参数以用于选择性干法蚀刻处理；b)对于所述选择性干法蚀刻处理，将所述处理室的处理压强设定为在1托至10托的范围内的第预定压强；c)在第时间段期间相对于所述处理室中的衬底的第二膜材料选择性地蚀刻所述衬底的第膜材料；d)将所述处理室中的压强降低到第二预定压强，所述第二预定压强比所