Silicon thin film single-sided removal method

• Main Authors: ZHANG XINYU, YAN DI, JIN HAO, YANG JIE
• Format: Patent
• Language: Chinese; English
• Published: 30.01.2018
• Subjects: BASIC ELECTRIC ELEMENTS; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

The invention discloses a silicon thin film single-sided removal method. The method comprises the steps that cleaning and surface texturing are carried out on a silicon wafer; a thin film is depositedon the back of the silicon wafer in a surface-to-surface manner; a protection layer is deposited on the back of the silicon wafer; the front of the silicon wafer and the plated thin film are oxidizedto form an oxide layer; and the oxide layer and the protection layer are removed by an acid etching solution. According to the silicon thin film single-sided removal method, the single-sided siliconthin film can be removed without any damage and without contamination. 本申请公开了种硅薄膜单面去除方法，包括：对硅片进行清洗和表面制绒；以面靠面的方式在所述硅片的背面沉积薄膜；在所述硅片的背面沉积保护层；将所述硅片的正面和绕镀的薄膜氧化，形成氧化层；利用酸腐蚀液刻蚀，去除所述氧化层和所述保护层。上述硅薄膜单面去除方法，能够无损伤且零污染的单面去除硅薄膜。