Titanium oxide passivation film preparation method and solar energy cell prepared through utilizing titanium oxide passivation film preparation method

• Main Authors: HE JIAN, YAN BAOJIE, HUANG ZHILIN, XIA JINCAI, YE JICHUN, ZHOU JIANHONG, ZENG YUHENG, GAO PINGQI, XIAO JIANFENG, LING ZHAOHENG
• Format: Patent
• Language: Chinese; English
• Published: 26.01.2018
• Subjects: BASIC ELECTRIC ELEMENTS; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

The invention discloses a titanium oxide passivation film preparation method. The method comprises steps that an electron beam deposition method is utilized to deposit a metal titanium film with certain thickness at the surface of a silicon chip after pretreatment, then annealing is carried out in the oxygen atmosphere, and cooling in the nitrogen atmosphere is then carried out. The electron beamdeposition method and the metal titanium film are utilized to directly carry out oxidation of the metal titanium film to form a titanium oxide film, compared with the ALD/CVD process, equipment requirements are low, an operation mode and the operation flow are simpler, adjustment on the thickness of the metal titanium film and the oxidation process is facilitated to adapt to different silicon chippassivation demands, the titanium oxide passivation film and other passivation medium layers can excellently form laminated layers, so the better passivation result is realized; the method is suitable for a thermal evaporatio