Ultra-deep power down mode control in memory device

• Main Authors: DINH JOHN, GONZALES NATHAN, LEWIS DERRIC, INTRATER GIDEON
• Format: Patent
• Language: Chinese; English
• Published: 19.01.2018
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

Described are embodiments directed to memory devices, including non-volatile memory (NVM), such as flash memory devices, and/or resistive switching memories (e.g., conductive bridging random-access memory [CBRAM], resistive RAM [ReRAM], etc.). Particular embodiments can include structures and methods of operating flash and/or resistive switching memories that can be written (programmed/erased) between one or more resistance and/or capacitive states. A CBRAM storage element may be configured such that when a forward or reverse bias greater than a threshold voltage is applied across electrodes of the CBRAM storage element, the electrical properties (e.g., resistance) of the CBRAM storage element can change. Such embodiments are suitable to any type of memory device, including both volatile and non-volatile types/devices, and that may include resistive switching memory devices. 描述了种针对存储器装置的实施方式，存储器装置包括非易失性存储器，诸如闪速存储器装置和/或阻变存储器(例如，导电桥接随机存取存储器[CBRAM]、电阻式RAM(ReRAM)等)。具体实施方式可以包括操作可以在个或更多个电阻和/或电容状态之间写入(编程/擦除)的闪速存储器和/