Interconnects with inner sacrificial spacers

• Main Authors: PATIL SURAJ K, FANG QIANG, SHU JIEHUI, SUN ZHIGUO
• Format: Patent
• Language: Chinese; English
• Published: 16.01.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to interconnects with inner sacrificial spaces, and discloses interconnect structures and methods of forming such interconnect structures. A spacer is formed inside an opening ina dielectric layer. After the spacer is formed, a conductive plug is formed inside the opening in the dielectric layer. After the conductive plug is formed, the spacer is removed to define an air gaplocated inside the opening in the dielectric layer. The air gap is located between the conductive plug and the opening in the dielectric layer. 本发明涉及内牺牲间隔件的互连，其揭示互连结构以及形成该互连结构的方法。间隔件形成于介电层中的开口内。于形成该间隔件之后，导电柱塞形成于该介电层中的该开口内。于形成该导电柱塞后，移除该间隔件以定义位于该介电层中的该开口内的空气间隙。该空气间隙位于该导电柱塞与该介电层中的该开口之间。