Method of correcting errors in a memory array and a system for implementing the same

• Main Authors: YIUN SHIH, CHIA-FU LEE, HSUEHIH YANG, YU-DER CHIH, KUANUN CHEN, CHIEN-YIN LIU, SHIH-LIEN LINUS LU
• Format: Patent
• Language: Chinese; English
• Published: 09.01.2018
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

A method of correcting errors in a memory array is provided. The method includes configuring a first memory array with a first error correction code (ECC) to provide error correction of data stored inthe first memory array, configuring a second memory array with a second ECC to provide error correction of the data stored in the first memory array, performing a reflow process on the first and second memory array, and correcting data stored in the first memory array based on at least the first ECC or the second ECC. The first memory array includes a first set of memory cells arranged in rows and columns. The second memory array includes a second set of memory cells arranged in rows and columns. The invention also provides a system for using the method to correct errors in the memory array. 种校正存储器阵列中的错误的方法。该方法包括配置具有第纠错码(ECC)的第存储器阵列以提供存储在第存储器阵列中的数据的错误校正，配置具有第二ECC的第二存储器阵列以提供存储在第存储器阵列中的数据的错误校正，对第存储器阵列和第二存储器阵列实施回流工艺，以及至少基于第ECC或第二ECC校正存储在第存储器阵列中的数据。第存储器阵列包括布置为多行和多列的第组存储器单元。第二存储器阵列包括布置多行和多列的第二组存储器单元。本发明还提供了实施校正存储器阵列中的