PMOS device based on direct band gap modified Ge channel and preparation method for the same

• Main Authors: SONG JIANJUN, XUAN RONGXI, MIAO YUANHAO, ZHANG HEMING, HU HUIYONG, JIANG DAOFU
• Format: Patent
• Language: Chinese; English
• Published: 05.01.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to a PMOS device based on a direct band gap modified Ge channel and a preparation method for the same. The preparation method comprises steps of choosing a monocrystalline Si substrate, growing a first Ge layer, growing a second Ge layer, continuously growing a gate medium layer and a gate layer, using a selective etching technology to etch the gate medium layer and the gatelayer in an appointed area to form a gate, performing a sacrifice protection layer on the surface of the gate, using the etching technology to perform etching on the second Ge layer to form a Ge stepat a gate position, growing an SiGe layer on the surface of the second Ge layer and removing the sacrifice protection layer in order to form the PMOS device. The PMOS device based on the direct band gap modified Ge channel and the preparation method for the same take a direct band gap Ge material as a channel of the PMOS device, and can dramatically improve cavity mobility and device driving current. Besides, the direct ba