In-situ annealing technology of an aluminum nitride crystal

• Main Authors: LAI ZHANPING, CHENG HONGJUAN, SHI YUEZENG, JIN LEI
• Format: Patent
• Language: Chinese; English
• Published: 05.01.2018
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The invention relates to an in-situ annealing technology of an aluminum nitride crystal. In-situ annealing is carried out after growth of an aluminum nitride crystal growth chamber is completed; in the seed aluminum nitride crystal growth process, a heat conduction table is arranged in a crucible, a...