In-situ annealing technology of an aluminum nitride crystal

• Main Authors: LAI ZHANPING, CHENG HONGJUAN, SHI YUEZENG, JIN LEI
• Format: Patent
• Language: Chinese; English
• Published: 05.01.2018
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The invention relates to an in-situ annealing technology of an aluminum nitride crystal. In-situ annealing is carried out after growth of an aluminum nitride crystal growth chamber is completed; in the seed aluminum nitride crystal growth process, a heat conduction table is arranged in a crucible, and a cold trap table is arranged on a substrate support; the heat conduction table guides the high temperature of the side wall of the crucible into the crucible in a heat conduction mode, and a high-temperature area is formed around the seed crystal; meanwhile, the temperature of the back surface of the seed crystal is guided out through the cold trap table, a low-temperature area is formed on the seed crystal, and therefore the rest area, except the seed crystal serving as the low-temperaturearea, on the upper portion of the crucible is the high-temperature area. Due to the high temperature on the periphery of the seed crystal, the area has a low aluminum nitride vapor supersaturation degree, and therefore the gr