EDGE-EMITTING SEMICONDUCTOR LASER AND METHOD FOR THE PRODUCTION THEREOF

An edge-emitting semiconductor laser comprises a semiconductor structure, which has a layer sequence comprising layers overlapping along a direction of growth. The semiconductor structure is delimited laterally by a first facet (400) and a second facet (500). The semiconductor structure has a middle...

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Bibliographic Details
Main Authors AVRAMESCU ADRIAN STEFAN, LELL ALFRED, KOENIG HARALD
Format Patent
LanguageChinese
English
Published 01.12.2017
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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