EDGE-EMITTING SEMICONDUCTOR LASER AND METHOD FOR THE PRODUCTION THEREOF

• Main Authors: AVRAMESCU ADRIAN STEFAN, LELL ALFRED, KOENIG HARALD
• Format: Patent
• Language: Chinese; English
• Published: 01.12.2017
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRICITY

An edge-emitting semiconductor laser comprises a semiconductor structure, which has a layer sequence comprising layers overlapping along a direction of growth. The semiconductor structure is delimited laterally by a first facet (400) and a second facet (500). The semiconductor structure has a middle section (300) and a first edge section (410) adjacent to the first facet. The layer sequence is offset in the first edge section with respect to the middle section in the direction of growth (201). The semiconductor structure contains a substrate (100), a lower cladding layer (210), a lower waveguide layer (220), an active layer (230), an upper waveguide layer (240) and a top cladding layer (250). In the region of the facet, there is an electrically insulating intermediate layer (260), which prevents a current flow through the semiconductor structure in an edge section (410) of the facet (400). 边缘发射半导体激光器包括半导体结构，所述半导体结构具有层序列，所述层序列包括沿生长方向重叠的层。半导体结构在横向上由第刻面（400）和第二刻面（500）划定。所述半导体结构具有中部区段（300）和邻近第刻面的第边缘区段（410）。所述层序列在