Film for forming protection film

• Main Authors: SAIKI NAOYA, INAO YOUICHI
• Format: Patent
• Language: Chinese; English
• Published: 01.12.2017
• Subjects: AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G; BASIC ELECTRIC ELEMENTS; CHEMISTRY; COMPOSITIONS BASED THEREON; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL PROCESSES OF COMPOUNDING; MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS; METALLURGY; ORGANIC MACROMOLECULAR COMPOUNDS; SEMICONDUCTOR DEVICES; THEIR PREPARATION OR CHEMICAL WORKING-UP; WORKING-UP

This film for forming a protection film is provided for the purpose of forming a protection film for protecting a semiconductor chip, and the surface of the film after curing has a shore D hardness equal to or higher than 55, and a Young's modulus (23 DEG C) equal to higher than 1.0*109 Pa. 本发明的保护膜形成用膜用于形成保护半导体芯片的保护膜，其中，固化后的膜表面的肖氏硬度D为55以上，而且杨氏模量(23℃)为1.0×10Pa以上。