FUNCTIONALLY GRADED CARBIDES

• Main Authors: CUTLER RAYMOND A, SYGNATOWICZ MICHAEL M, SHETTY DINESH
• Format: Patent
• Language: Chinese; English
• Published: 28.11.2017
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; ALLOYS; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; FERROUS OR NON-FERROUS ALLOYS; LAYERED PRODUCTS; LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM; METALLURGY; PERFORMING OPERATIONS; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; TRANSPORTING; TREATMENT OF ALLOYS OR NON-FERROUS METALS; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

A functionally graded carbide body (400) can include a group 5 metal carbide substrate having a bulk composition region (410) that contains at least 70 wt% of a rhombohedral [zeta]-phase carbide. A [gamma]-phase-rich region (420) having a [gamma]-phase-rich composition can be at a surface (430) of the substrate, and a phase composition gradient region (440) can transition from the [gamma]-phase-rich composition region at the surface to the bulk composition region at a gradient depth (450) below the surface. 本发明公开了功能梯度碳化物主体(400)，其可包括5族金属碳化物基底，所述5族金属碳化物基底具有包含至少70重量％的菱面体ζ-相碳化物的本体组合物区(410)。具有富γ-相组合物的富γ-相区(420)可处于基底的表面(430)处，并且相组成梯度区(440)可从所述表面处的富γ-相组合物区过渡到所述表面下梯度深度(450)处的本体组合物区。