Composition for hard mask

• Main Authors: KIM, SANG TAE, CHOI, HAN YOUNG, YANG, DON SIK, SUNG, SHI JIN
• Format: Patent
• Language: Chinese; English
• Published: 10.11.2017
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS

The invention provides a composition for a hard mask. The composition for the hard mask comprises a polymer and a solvent of at least one repeated unit in a group consisting of certain chemical formulas and thus forms a lower layer film (hard mask mould). Specifically, the polymer comprises at least one repeated unit which is chosen from the following chemical formulas 1-1 and 1-2. In the following chemical formula 1-1, Ar1 and Ar2 each are aromatic hydrocarbyl with 6-10 carbon atoms or the Ar1 is a hydrogen atom and the Ar2 is a hydrocarbyl with 1-25 carbon atoms. The Ar1 and the Ar2 can be mutually connected to form a 5-7 loops, wherein n is an integer ranging from 1-3; and in the following formula 1-2, Ar3 consists of 4-20 arylidenes. 本发明提供种硬掩模用组合物，其通过包含含有选自由特定化学式组成的组中的至少种重复单元的聚合物和溶剂，从而能够形成具有优异的耐热性、高温耐热性及涂覆均匀性的抗蚀剂下层膜(硬掩模)。更详细而言，所述聚合物包含选自由下述化学式1-1和化学式1-2组成的组中的至少种重复单元，下述化学式1-1中，Ar及Ar各自独立地为碳原子数6～20的芳香族烃基，或者Ar为氢原子且Ar为碳原子数1～25的烃基，Ar和Ar可彼此连结而形成5～7元环，n为1～3的整数；下述化学式1-2中，Ar为4～20的亚芳基。