Polycrystalline silicon chunks and method for producing them

• Main Authors: FABRY LASZLO, WOCHNER HANNS
• Format: Patent
• Language: Chinese; English
• Published: 17.10.2017
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; ALLOYS; APPARATUS THEREFOR; CHEMISTRY; COMPOUNDS THEREOF; CRUSHING, PULVERISING, OR DISINTEGRATING; CRUSHING, PULVERISING, OR DISINTEGRATING IN GENERAL; CRYSTAL GROWTH; FERROUS OR NON-FERROUS ALLOYS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OFSOLID INORGANIC COMPOUNDS; INORGANIC CHEMISTRY; METALLURGY; MILLING GRAIN; NON-METALLIC ELEMENTS; PERFORMING OPERATIONS; PREPARATORY TREATMENT OF GRAIN FOR MILLING; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION; TECHNICAL SUBJECTS COVERED BY FORMER USPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TRANSPORTING; TREATMENT OF ALLOYS OR NON-FERROUS METALS; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The present invention relates to polycrystalline silicon chunks and a method for producing them. Polycrystalline silicon chunks are cubic and have a metal content of less than 200 pptw and a dopant content of less than 50 ppta. Methods for producing polycrystalline silicon chunks, include the steps of providing a polycrystalline silicon rod, comminuting the polycrystalline silicon rod into cubic chunks, and cleaning the polycrystalline silicon chunks, wherein comminution takes place using a spiked-roll crusher having at least one spiked roll, the spiked roll including W2C phases or WC phases with 0.1-10% of a metal carbide selected from the group consisting of titanium carbide, chromium carbide, molybdenum carbide, vanadium carbide, and nickel carbide or consisting of steel with 1-25% W. 本发明涉及多晶硅块及其制造方法。所述多晶硅块为方形并且在其表面上具有小于200pptw的金属含量和小于50ppta的掺杂剂含量。所述制造方法包括：提供多晶硅棒，将所述多晶硅棒粉碎成方形块，以及对多晶硅块进行清洁，其中，使用具有至少个齿辊的齿辊式粉碎机进行粉碎，所述至少个齿辊包含WC相，或者包含WC相以及0.1-10％选自由以下组成的组中的金属碳化物：碳化钛、碳化铬、碳化钼、碳化钒和碳化镍，或者由具有1-25％W的钢组成。