Preparation method of [Beta]-Ga2O3 nano array

• Main Authors: JIAO SHUJIE, LIU CHAOYUE, LIAO YIKAI
• Format: Patent
• Language: Chinese; English
• Published: 19.09.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; NANOTECHNOLOGY; PERFORMING OPERATIONS; SEMICONDUCTOR DEVICES; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; TRANSPORTING

The present invention discloses a preparation method of a [Beta]-Ga2O3 nano array. The method comprises: employing a water bath method to prepare a GaOOH seed layer, employing a hydro-thermal method to prepare a GaOOH nano array on the seed layer, and finally obtaining a [Beta]-Ga2O3 nano array through thermal annealing. The preparation method of the [Beta]-Ga2O3 nano array is a green chemistry method and employs the chemical method seed layer and the nano array, the array is neatly arranged, the dimension is uniform, the preparation method is simple and low in cost and easy to popularize so as to facilitate large-scale preparation, the GaOOH seed layer is prepared, and a substrate is not limited and can be quartz, silicon, a transparent conductive substrate (ITO or FTO), sapphire (C-AL2O3) and the like so as to facilitate different applications. 本发明公开了种β-氧化镓纳米阵列的制备方法，所述方法利用水浴法制备GaOOH种子层，然后利用水热法在种子层上制备GaOOH纳米阵列，最后通过热退火获得β-GaO纳米阵列。本发明的方法是种绿色化学方法，采用化学方法种子层和纳米阵列，阵列排列整齐，尺寸均匀，制备方法简单廉价，易推广，利于大面积制备，并由于制备了GaOOH种子层，可不