Method for producing a mask for the extreme ultraviolet wavelength range, mask and device

Method for producing a mask for the extreme ultraviolet wavelength range proceeding from a mask blank (250, 350, 550, 950) having defects (220, 320, 520, 620, 920), wherein the method comprises the following steps: a. classifying the defects (220, 320, 520, 620, 920) into at least a first group and...

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Bibliographic Details
Main Authors CAPELLI RENZO, GARETTO ANTHONY, BLUMRICH FREDERIK, PETERS JAN-HENDRIK
Format Patent
LanguageChinese
English
Published 08.09.2017
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Summary:Method for producing a mask for the extreme ultraviolet wavelength range proceeding from a mask blank (250, 350, 550, 950) having defects (220, 320, 520, 620, 920), wherein the method comprises the following steps: a. classifying the defects (220, 320, 520, 620, 920) into at least a first group and a second group; b. optimizing arrangement of an absorber pattern (170) on the mask blank (250, 350, 550, 950) in order to compensate for a maximum number of the defects of the first group by means of the arranged absorber pattern (170); and c. applying the optimized absorber pattern (170) to the mask blank (250, 350, 550, 950). 种由掩模坯体(250，350，550，950)制造极紫外波长范围的掩模的方法，所述掩模坯体具有缺陷(220，320，520，620，920)，其中，所述方法包括下列步骤：a.将所述缺陷(220，320，520，620，920)归类为至少个第组和第二组；b.优化掩模坯体(250，350，550，950)上的吸收体图案(170)的布置，以通过布置的吸收体图案(170)补偿最大数量的第组的缺陷；以及c.将优化的吸收体图案(170)施加到掩模坯体(250，350，550，950)。
Bibliography:Application Number: CN201580058065