PE-ALD methods with reduced quartz-based contamination

• Main Authors: SOWA MARK J, BHATIA RITWIK, BERTUCH ADAM
• Format: Patent
• Language: Chinese; English
• Published: 29.08.2017
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The invention relates to PE-ALD methods with reduced quartz-based contamination. Methods of performing PE-ALD on a substrate with reduced quartz-based contamination are disclosed. The methods include inductively forming in a quartz plasma tube a hydrogen-based plasma from a feed gas that consists essentially of either hydrogen and nitrogen or hydrogen, argon and nitrogen. The nitrogen constitutes 2 vol % or less of the feed gas. The hydrogen-based plasma includes one or more reactive species. The one or more reactive species in the hydrogen-based plasma are directed to the substrate to cause the one or more reactive species to react with a initial film on the substrate. The trace amounts of nitrogen serve to reduce the amount of quartz-based contamination in the initial film as compared to using no nitrogen in the feed gas. 本发明涉及具有减少的基于石英的污染物的等离子体增强原子层沉积方法。具体地，公开在基材上执行具有减少的基于石英的污染物的等离子体增强原子层沉积的方法。该方法包含在石英等离子体管中，从供应气体感应地形成基于氢的等离子体，该供应气体主要由氢与氮或者氢、氩与氮组成。氮构成该供应气体的2体积％或更少。该基于氢的等离子体包括种或多种反应物质。基于氢的等离子体中的种或多种反应物质被导引至