Intra-field process control for lithography

• Main Authors: LU, SHIN-RUNG, HUNG, AI-JEN, HUANG, CHEN-YEN, TSEN, YEN-DI
• Format: Patent
• Language: Chinese; English
• Published: 18.08.2017
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS

In some embodiments, the present application is directed to a method and system for process control of a lithography tool. The method transfers a reference pattern to exposure fields of a reference workpiece to form pairs of overlapping reference layers. Misalignment between the overlapping reference layers is measured to form first and second baseline maps, and a [Delta] baseline map is formed from the first and second baseline maps. A production pattern is transferred to exposure fields of a production workpiece to form second production layers arranged over and aligned to first production layers. Misalignment between the first and second production layers is measured to form a production map. The [Delta] baseline map is transformed and subsequently added to the production map, to form a final production map. Parameters of a process tool are updated based on the final production map. 本申请涉及用于光刻的场内过程控制。在些实施例中，本申请案涉及种用于光刻工具的过程控制的方法及系统。所述方法将参考图案转印到参考工件的曝光场以形成重叠参考层对。测量所述重叠参考层之间的未对准以形成第基线映图及第二基线映图，且从所述第基线映图及所述第二基