Semiconductor Device And Circuit

• Main Author: LAI MINGFANG
• Format: Patent
• Language: Chinese; English
• Published: 11.08.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present disclosure relates to a semiconductor device. The semiconductor device includes a substrate, a first doping region, a second doping region, a third doping region, a first transient block unit and a second transient block unit. The first doping region is in the substrate. The second doping region is in the first doping region. The third doping region is in the first doping region. The first transient block unit is electrically connected to the second doping region. The second transient block unit is electrically connected between the third doping region and the first transient block unit. 本发明的实施例涉及种半导体器件。半导体器件包括衬底、第掺杂区、第二掺杂区、第三掺杂区、第瞬时阻挡单元及第二瞬时阻挡单元。第掺杂区位于衬底中。第二掺杂区位于第掺杂区中。第三掺杂区位于第掺杂区中。第瞬时阻挡单元电连接至第二掺杂区。第二瞬时阻挡单元电连接在第三掺杂区和第瞬时阻挡单元之间。本发明的实施例还涉及种半导体电路以及种瞬时阻挡器件。