SILVER NANOWIRES, PRODUCTION METHODS THEREOF, CONDUCTORS AND ELECTRONIC DEVICES INCLUDING THE SAME

• Main Authors: KIM,KWANGHEE, KIM,JIYE, KIM,MI JEONG, KWAK,CHAN, KIM,JUNGHWA, KO,DONG SU
• Format: Patent
• Language: Chinese; English
• Published: 11.08.2017
• Subjects: BASIC ELECTRIC ELEMENTS; CABLES; CALCULATING; COMPUTING; CONDUCTORS; COUNTING; ELECTRIC DIGITAL DATA PROCESSING; ELECTRICITY; INSULATORS; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; NANOTECHNOLOGY; PERFORMING OPERATIONS; PHYSICS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; TRANSPORTING

The invention discloses silver nanowires, production methods thereof, conductors and electronic devices including the same. An electrical conductor includes a substrate; and a conductive layer disposed on the substrate and including a plurality of silver nanowires, wherein the silver nanowires exhibit a main peak assigned to a (111) crystal plane in an X-ray diffraction spectrum thereof, and a 2 [theta] full width at half maximum (FWHM) of the main peak after Gaussian fitting is less than about 0.40 degrees. 公开银纳米线的群、其制造方法、包括其的电导体和电子装置。所述电导体包括：基底；和设置在所述基底上并且包括多个银纳米线的导电层，其中所述银纳米线在其X射线衍射光谱中呈现归属于(111)晶面的主峰，且在高斯拟合之后的所述主峰的2θ半宽度(FWHM)小于约0.40度。