Non-contact and no-damage epitaxial SOI epitaxial layer electrical resistivity measurement method

• Main Authors: LIU QINGCHAO, FU CHAOFAN, GAO WENLIN
• Format: Patent
• Language: Chinese; English
• Published: 08.08.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a non-contact and no-damage epitaxial SOI epitaxial layer electrical resistivity measurement method. The method is specific to the epitaxial SOI epitaxial layer electrical resistivity measurement; for achieving an accurate measurement effect, the epitaxial SOI surface is subjected to specific pretreatment to enable surface defects and electrical parameters to satisfy requirements; then a specific voltage is applied, and the electrical resistivity is worked out according to a C-V curve; and the final result error is less than 0.1%. The method is non-contact type measurement, and has the advantages of no destruction, no damage, reutilization and the like; in actual production, the measured epitaxial SOI still can be used; and therefore, the product yield can be greatly improved, and cost can be saved. 本发明公开了种非接触无损伤的测量外延SOI外延层电阻率的方法，该方法针对外延SOI外延层进行电阻率的测量，为了达到测量精准的效果，首先对外延SOI表面进行特定的预处理，使表面的缺陷及电学参数达到所需要求。再施加特定电压，根据C-V曲线算出电阻率。最终结果误差小于0.1％。本发明为非接触式测量，具有非破坏性、无损伤性、可重复利用等优点。在实际生产中，被测外延SOI仍然可以使用。