Flexible GaN light-emitting diodes

Methods of fabricating flexible, free-standing LED structures are provided. An LED structure can be formed on a sapphire substrate, and the surface of the LED structure can then be coated with epoxy and attached to a rigid supporting substrate. A laser lift-off process can be performed using an ultr...

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Bibliographic Details
Main Authors CHOI HOI WAI, CHEUNG YUK FAI, LI KWAI HEI
Format Patent
LanguageChinese
English
Published 01.08.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Methods of fabricating flexible, free-standing LED structures are provided. An LED structure can be formed on a sapphire substrate, and the surface of the LED structure can then be coated with epoxy and attached to a rigid supporting substrate. A laser lift-off process can be performed using an ultraviolent beam from a high-power pulsed-mode laser and a shadow mask, causing at least a portion of the LED structure to separate from the sapphire substrate. The structure can then be immersed in an acetone bath to dissolve the epoxy and separate the structure from the supporting substrate. 提供了制造柔性独立LED结构的方法。LED结构可在蓝宝石衬底上形成，并且然后LED结构的表面可被涂覆有环氧树脂并附着到刚性支撑衬底。可使用来自高功率脉冲模式激光器的紫外光束和阴影掩模来执行激光剥离过程，从而使LED结构的至少部分与蓝宝石衬底分离。然后，衬底可浸没在丙酮浴中以溶解环氧树脂并分离结构与支撑衬底。
Bibliography:Application Number: CN201580044661