Photoelectric conversion element and wavelength sensor

• Main Authors: HOANG VU CHUNG, HAYASHI KOKI, ITO YASUO
• Format: Patent
• Language: Chinese; English
• Published: 01.08.2017
• Subjects: BASIC ELECTRIC ELEMENTS; CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A photoelectric conversion element is provided in which the direction of movement of electrons in the element varies in accordance with the wavelength of light to be converted. A photoelectric conversion unit (20) is provided with: an active layer (40) to which the light to be converted enters; an intermediate layer (50) disposed on the opposite side from the side on which the light to be converted enters, with respect to the active layer (40); and a reflective layer (60) disposed so as to oppose the active layer (40) across the intermediate layer (50). The active layer (40) includes a plasmonic material which is a material in which plasmon resonance is caused by an interaction with the light to be converted. The intermediate layer (50) has both semiconductor characteristics and transparency to the light to be converted. The reflective layer (60) has reflectivity with respect to the light to be converted. 本发明涉及光电转换元件以及波长传感器。本发明实现元件内的电子的移动方向根据转换对象光的波长而变化的光电转换元件。光电转换部(20)具备：供转换对象光入射的活性层(40)、相对于活性层(40)而被配置于与转换对象