Oxide sintered body, method for producing same, sputtering target and method for manufacturing semiconductor device

• Main Authors: WATATANI KENICHI, MIYANAGA MIKI, AWATA HIDEAKI
• Format: Patent
• Language: Chinese; English
• Published: 01.08.2017
• Subjects: ARTIFICIAL STONE; BASIC ELECTRIC ELEMENTS; CEMENTS; CERAMICS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS; CONCRETE; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; LIME, MAGNESIA; METALLURGY; REFRACTORIES; SEMICONDUCTOR DEVICES; SLAG; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TREATMENT OF NATURAL STONE

Provided is an oxide sintered body containing indium, tungsten and zinc, which contains a first crystal phase that is a main component of the oxide sintered body and contains a bixbyite crystal phase and a second crystal phase that has a higher zinc content than the first crystal phase, and wherein the particles constituting the second crystal phase have an average major axis length of from 3 [mu]m to 50 [mu]m (inclusive) and an average aspect ratio of from 4 to 50 (inclusive). 本发明提供种包含铟、钨和锌的氧化物烧结材料，所述氧化物烧结材料包含：第晶相，所述第晶相为所述氧化物烧结材料的主要成分并包含方铁锰矿型晶相；和第二晶相，所述第二晶相的锌的含量比所述第晶相的锌的含量高，所述第二晶相包含平均长轴尺寸为3μm以上且50μm以下并且平均长径比为4以上且50以下的粒子。