Method of fabricating tantalum nitride barrier layer and semiconductor device thereof

• Main Authors: WEI HAO-HAN, CHEN WENGNG, CHUNG MINGING, HUNG CHING, WANG YU-SHENG, JENG CHIRNG
• Format: Patent
• Language: Chinese; English
• Published: 25.07.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a method of fabricating a tantalum nitride barrier layer and a semiconductor device thereof. A method of fabricating tantalum nitride barrier layer in an ultra low threshold voltage semiconductor device is provided. The method includes forming a high-k dielectric layer over a semiconductor substrate. Subsequently, a tantalum nitride barrier layer is formed on the high-k dielectric layer. The tantalum nitride barrier layer has a Ta:N ratio between 1.2 and 3. Next, a plurality of first metal gates is formed on the tantalum nitride barrier layer. The first metal gates are patterned, and then a second metal gate is formed on the tantalum nitride barrier layer. The tantalum and nitrogen ratio of the tantalum nitride isolation layer can be precisely adjusted, and the tantalum nitride isolation layer suppresses the diffusion of material between different layers, and the dielectric retardation is greatly reduced. 本发明揭露种制造氮化钽隔离层的方法及金属栅极堆。制造用于超低临界电压半导体装置的氮化钽隔离层的方法包含：形成高介电常数介电层于半导体基材上。接着，形成氮化钽隔离层