Chemical mechanical polishing liquid and application thereof
The invention a high-concentration chemical mechanical polishing liquid and application thereof; the high-concentration chemical mechanical polishing liquid comprises abrasive particles (a), amino silane coupling agent (b), an imidazole compound (c), a complexing agent (d), organic phosphoric acid (...
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Main Authors | , , , , |
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Format | Patent |
Language | Chinese English |
Published |
07.07.2017
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Subjects | |
Online Access | Get full text |
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Summary: | The invention a high-concentration chemical mechanical polishing liquid and application thereof; the high-concentration chemical mechanical polishing liquid comprises abrasive particles (a), amino silane coupling agent (b), an imidazole compound (c), a complexing agent (d), organic phosphoric acid (e), an oxidant (f) and water (g). The high-concentration chemical mechanical polishing liquid is used for TSV (through-silicon-via) and IC (integrated circuit) barrier layer polishing and may meet the requirements on polishing rates and selection ratios of various materials; the liquid has great corrective powder for the surface of a silicon wafer device, can provide quick flattening and can prevent local or whole corrosion occurred during metal polishing, operating efficiency is improved, and production cost is lowered.
本发明公开了种高浓缩的化学机械抛光液及其应用,该抛光液包含:(a)研磨颗粒(b)氨基硅烷偶联剂(c)唑类化合物(d)络合剂(e)有机磷酸(f)氧化剂(g)水。本发明的化学机械抛光液用于TSV和IC阻挡层抛光,可以满足各种材料的抛光速率和选择比要求;该抛光液对硅片器件表面有很强的矫正能力,能实现快速平坦化,且可防止金属抛光过程中产生的局部和整体腐蚀,提高工作效率,降低生产成本。 |
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Bibliography: | Application Number: CN201511026801 |