Thermal chemical vapor deposition system and operating method thereof

• Main Authors: JUI-FU HSU, JHENG-UEI HSIEH, DING-I LIU, PO-HSIUNG LEU, SHIAN-HUEI LIN, CHENG-TSUNG WU, YENAN LO, YI-FANG LAI, KAI-SHIUNG HSU, SI-WEN LIAO
• Format: Patent
• Language: Chinese; English
• Published: 04.07.2017
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A thermal chemical vapor deposition (CVD) system includes a bottom chamber, an upper chamber, a workpiece support, a heater and at least one shielding plate. The upper chamber is present over the bottom chamber. The upper chamber and the bottom chamber define a chamber space therebetween. The workpiece support is configured to support a workpiece in the chamber space. The heater is configured to apply heat to the workpiece. The shielding plate is configured to at least partially shield the bottom chamber from the heat. 热化学汽相沉积(CVD)系统包括底室、上室、工件支撑件、加热器和至少个屏蔽板。上室存在于在底室上方。室间隔限定在上室和底室之间。工件支撑件配置为在室间隔中支撑工件。加热器配置为对工件应用热量。屏蔽板配置为至少部分地为底室屏蔽热量。本发明实施例涉及热化学汽相沉积系统及其操作方法。