SEMICONDUCTOR DEVICE

• Main Author: KUWAJIMA TERUHIRO
• Format: Patent
• Language: Chinese; English
• Published: 27.06.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

An improvement is achieved in the performance of a semiconductor device. The semiconductor device includes a semiconductor substrate, a wiring structure formed over the semiconductor substrate and including a plurality of wiring layers, and a first coil, a second coil, and a third coil which are formed above the semiconductor substrate. In a region located under the first coil and overlapping the first coil in plan view, the second and third coils CL2a and CL2b are disposed. The second and third coils are foamed in the same layer and electrically coupled in series to each other. Each of the second and third coils and the first coil are not coupled to each other via a conductor, but are magnetically coupled to each other. 本发明涉及种半导体器件。实现了半导体器件的性能提高。该半导体器件包括：半导体衬底；布线结构，其形成在所述半导体衬底上方并且包括多个布线层；以及第线圈、第二线圈、和第三线圈，其形成在所述半导体衬底上方。在位于所述第线圈下方并且在平面图中与第线圈重叠的区域中，设置第二线圈(CL2a)和第三线圈(CL2b)。第二线圈和第三线圈形成在相同的层中并且彼此串联电耦合。第二线圈和第三线圈中的每个和第线圈没有经由导体彼此耦合，但彼此磁耦合。