ELECTROSTATIC DISCHARGE PROTECTION STRUCTURES FOR EFUSES

The present disclosure relates to semiconductor structures and, more particularly, to electrostatic discharge (ESD) protection structures for eFuses. The structure includes an electrostatic discharge (ESD) protection structure operatively coupled to an eFuse, which is structured to prevent unintenti...

Full description

Saved in:
Bibliographic Details
Main Authors AHMED Y. GINAWI, ANDREAS D. STRICKER, EPHREM G. GEBRESELASIE, ALAIN F. LOISEAU, RICHARD A. PORO, JOSEPH M. LUKAITIS
Format Patent
LanguageChinese
English
Published 23.06.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:The present disclosure relates to semiconductor structures and, more particularly, to electrostatic discharge (ESD) protection structures for eFuses. The structure includes an electrostatic discharge (ESD) protection structure operatively coupled to an eFuse, which is structured to prevent unintentional programming of the eFuse due to an ESD event originating at a source. 本发明涉及种用于电熔丝的静电放电保护结构，是关于半导体结构，并且更具体地说，是关于用于电熔丝的静电放电(ESD)保护结构。本结构包括种有效耦合至电熔丝的静电放电(ESD)保护结构，该ESD保护结构经结构化以防止因源于来源的ESD事件而导致该电熔丝的非刻意编程。
Bibliography:Application Number: CN201610076290