Method for monitoring pedestal temperature uniformity

• Main Authors: SHI HONGTAO, LIN ZHIXIN
• Format: Patent
• Language: Chinese; English
• Published: 16.06.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a method for monitoring pedestal temperature uniformity. Silicon dioxide is formed on the surface of a wafer; the wafer is arranged on the pedestal to carry out temperature rising processing; and hydrogen is introduced and reaction with silicon dioxide is carried out based on the reducing action of hydrogen, so that the silicon dioxide film is thinned; and the higher the temperature of the area, the faster the reducing action rate in the area and the thinner the silicon dioxide film, so that the temperature uniformity can be calculated. In addition, the silicon dioxide formed on the surface of the wafer can be etched and removed by a wet process, so that a wafer recycling problem can be solved and no pollution is caused to a reaction chamber. 本发明提出了种监测基座温度均匀性的方法，在晶圆表面形成二氧化硅，将晶圆放置在基座上进行升温，同时通入氢气，借助于氢气的还原作用与二氧化硅进行反应，减少二氧化硅薄膜厚度，温度越高的区域还原反应速率越快，二氧化硅薄膜的厚度减少的越多，由此推算出温度均匀性，此外，晶圆表面形成的二氧化硅可以通过湿法刻蚀去除，解决晶圆回收问题，并且不会对反应腔室造成污染。