Semiconductor device and method of making a semiconductor device

• Main Authors: GODEFRIDUS ADRIANUS MARIA HURKX, JAN SONSKY, JOHANNES JOSEPHUS THEODORUS MARINUS DONKERS, JEROEN ANTOON CROON
• Format: Patent
• Language: Chinese; English
• Published: 09.06.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device and a method of making the same is disclosed. The device includes a substrate having an AlGaN layer located on a GaN layer for forming a two dimensional electron gas at an interface between the AlGaN layer and the GaN layer. The device also includes a plurality of contacts. At least one of the contacts includes an ohmic contact portion located on a major surface of the substrate. The ohmic contact portion comprises a first electrically conductive material. The at least one of the contacts also includes a trench extending down into the substrate from the major surface. The trench passes through the AlGaN layer and into the GaN layer. The trench is at least partially filled with a second electrically conductive material. The second electrically conductive material is a different electrically conductive material to the first electrically conductive material. 本公开内容提出种半导体装置和制作半导体装置的方法。该装置包括衬底，该衬底具有AlGaN层，该AlGaN层位于GaN层上，用于在AlGaN层和GaN层之间的界面处形成二维电子气。该装置还包括多个接触。接触中的至少个接触包括位于衬底的主表面上的欧姆接触部分。欧姆接触部分