Light-emitting diode and manufacturing method thereof

• Main Authors: WU JUNYI, MENG CHENG, WANG DUXIANG, YANG SHUFAN
• Format: Patent
• Language: Chinese; English
• Published: 31.05.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a manufacturing method of a light-emitting diode. The manufacturing method comprises the following steps: providing an epitaxial structure containing a growth substrate, a first-type semiconductor layer, an active layer and a second-type semiconductor layer in sequence; forming an expansion electrode on the surface of the second-type semiconductor layer, and carrying out heat treatment to form Ohmic contact with the second-type semiconductor layer; providing a temporary substrate, jointing the temporary substrate with the epitaxial structure, and removing the growth substrate, so that the surface of the first-type semiconductor layer is exposed; forming an Ohmic contact layer, a mirror surface layer and a bonding layer in sequence on the exposed surface of the first-type semiconductor layer; providing a conducting substrate, jointing the conducting substrate with the bonding layer, and removing the temporary substrate, so that the surface of the second-type semiconductor layer and the