Thin film transistor, manufacturing method, display substrate and display device

• Main Authors: HUANG YINHU, YANG CHENGSHAO, CAO BINBIN, WANG MINGMING, ZOU ZHIXIANG, LUO BIAO
• Format: Patent
• Language: Chinese; English
• Published: 31.05.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a thin film transistor, a manufacturing method, a display substrate and a display device. The thin film transistor comprises a grid, a grid insulating layer, an active layer, a source and a drain which are formed on a substrate, wherein the active layer comprises a first pattern and a second pattern which are stacked, the source and the drain are arranged on the second pattern in a lap joint manner, the first pattern is formed by a nonmetal oxide semiconductor material, and the second pattern is formed by a metal oxide semiconductor material. The thin film transistor has the advantages that the on-state currents Ion of the front channel of the thin film transistor are large, the off-state currents Ioff of the rear channel of the thin film transistor are small, and accordingly a good on-off ratio feature is achieved. 本发明提供种薄膜晶体管、制作方法、显示基板及显示装置。其中，薄膜晶体管包括形成在衬底基板上的栅极、栅绝缘层、有源层、源极以及漏极；所述有源层包括层叠设置的第图形和第二图形，所述源极和漏极搭接在所述第二图形上，所述第图形由非金属氧化物半导体材料组成，所述第二图形由金属氧化物半导体材料组成。本发明的薄膜晶体管的前沟道的开态电流I较大，后沟道的关态电