Production method of TFT substrate

• Main Authors: YAO JIANGBO, LU MACAI, QIN SHIJIAN
• Format: Patent
• Language: Chinese; English
• Published: 31.05.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a production method of a TFT substrate. The production method comprises the steps of forming a TFT gate by virtue of a first photo-mask on the substrate, sequentially depositing a first insulating layer, an active layer and a second metal layer, forming a source electrode and a drain by virtue of a second photo-mask, sequentially forming a second insulating layer and a light resistance layer on the substrate, defining a pixel electrode pattern by virtue of a third photo-mask, forming a drain through hole in the second insulating layer, removing part of the light resistance layer, carrying out flocking on the residual light resistance layer, depositing a pixel electrode layer, removing the residual light resistance layer and the pixel electrode layer to form a pixel electrode, and linking the pixel electrode with the drain through the drain through hole. According to the scheme, the TFT substrate can be produced by virtue of only three photo-masks, and the pixel electrode layer is deposi