Production method of RB-IGBT chip and RB-IGBT chip

• Main Authors: TIAN XIAOLI, LU SHUOJIN, TENG YUAN, ZHU YANGJUN
• Format: Patent
• Language: Chinese; English
• Published: 24.05.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a production method of an RB-IGBT chip and the RB-IGBT chip. When the preparation of the front structure and back structure of a substrate is completed, the scribing area of the front side of the substrate is subjected to P type doping so as to obtain a P type isolation area with a preset depth. Then the laser scribing process is used to carry out scribing along the P type isolation area, since laser generates high temperature, the P type isolation area melts and flows to the back side of the substrate under the effect of gravity so as to cover the side face of the RB-IGBT chip, and thus with the scribing of the laser, an isolation layer which coats the side face of the RB-IGBT chip is formed. Compared with the prior art, the technical scheme provided by the invention has the advantages that the time consumption is short, the production efficiency is improved, the waste is little, the manufacturing cost is reduced, and resources are saved. 本发明公开了种RB-IGBT芯片的制作方法及RB-IGBT芯片，当对衬底的正面结构和背面结构