CMP slurry composition for organic film and polishing method using same

• Main Authors: KIM TAE WAN, KIM GO UN, YOO YONG SIK, CHOI JUNG MIN, KIM YONG KUK, KANG DONG HUN
• Format: Patent
• Language: Chinese; English
• Published: 17.05.2017
• Subjects: ADHESIVES; BASIC ELECTRIC ELEMENTS; CHEMISTRY; DYES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NATURAL RESINS; PAINTS; POLISHES; POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH; SEMICONDUCTOR DEVICES; SKI WAXES

The present invention relates to a CMP slurry composition, for an organic film, for polishing an organic film and an organic film polishing method using same, the CMP slurry composition comprising: a polar solvent and/or a non-polar solvent; metal oxide abrasives; an oxidant; and a heterocyclic compound, wherein the heterocyclic compound, as a heteroatom, comprises one or two of oxygen (O) atom, sulfur (S) atom and nitrogen (N) atom and has carbon content of 50-95 atom %. 本发明涉及用于抛光有机膜的用于有机膜的CMP浆料组合物以及使用其的有机膜抛光方法，所述CMP浆料组合物包含：极性溶剂和/或非极性溶剂；金属氧化物研磨剂；氧化剂；和杂环化合物，其中作为杂原子的杂环化合物包含氧(O)原子、硫(S)原子和氮(N)原子中的种或两种并且具有50-95原子％的碳含量。