Single-crystal diamond and method for manufacturing same, tool including single-crystal diamond, and component including single-crystal diamond

• Main Authors: NISHIBAYASHI YOSHIKI, SUMIYA HITOSHI, TATSUMI NATSUO
• Format: Patent
• Language: Chinese; English
• Published: 19.04.2017
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BORING; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS; GRINDING; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; MACHINE TOOLS; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; METAL-WORKING NOT OTHERWISE PROVIDED FOR; METALLURGY; PERFORMING OPERATIONS; POLISHING; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TRANSPORTING; TURNING; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

In a single-crystal diamond (20), groups of crystal defect points (20dp), which are points where distal ends of crystal defect lines (20dq) indicating lines where crystal defects (20d) are present reach a principal crystal growth face (20m), exist as aggregates in an X-ray topogram for the primary crystal growth face (20m). Furthermore, a plurality of crystal defect linear aggregation regions (20r) in which a group of crystal defect points (20dp) aggregates and extends linearly in a direction 30 DEG or less from an arbitrarily specified direction are arranged in rows in the single-crystal diamond (20). A single-crystal diamond is thereby provided that is suitable for use in a cutting tool, a polishing tool, an optical component, an electronic component, a semiconductor material, or the like. 在单晶金刚石(20)的晶体生长主表面(20m)的X射线形貌照片中，晶体缺陷点(20dp)的组聚集而存在，各个晶体缺陷点(20dp)是到达所述晶体生长主表面(20m)的晶体缺陷线(20dq)的前端点，所述晶体缺陷线(20dq)表示其中存在晶体缺陷(20d)的线。此外，在所述单晶金刚石(20)中，平行存在多个晶体缺陷线状聚集区域(20r)。在所述多个晶体缺陷线状聚集区域(20r)中，晶体缺陷点(20dp)的组聚集并在相对于个任意规定方向成30