Preparation method of ZnSe quantum dot sensitized nanometer TiO2 film

• Main Authors: LI KUIYING, REN LUN
• Format: Patent
• Language: Chinese; English
• Published: 29.03.2017
• Subjects: BASIC ELECTRIC ELEMENTS; CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE; ELECTRICITY

The invention discloses a preparation method of a ZnSe quantum dot sensitized nanometer TiO2 film. The preparation method mainly comprises the following steps: (1) dripping TiO2 slurry on the surface of conductive glass, blade-coating a layer of TiO2 slurry layer, calcining for 0.5h at 500 DEG C after drying, cooling to obtain a first coating; continuously preparing the second, the third or the fourth coating according to above mentioned method so as to manufacture one or more layers of TiO2 film; (2) adding sodium borohydride and selenium powder in deionized water, magnetically stirring under nitrogen to obtain a Se precursor solution; (3) adding ligand L-Cys and zinc acetate in the deionized water, regulating PH to 11 by use of a NaOH solution to obtain a Zn precursor solution; (4) mixing the Se precursor solution and the Zn precursor solution in a volume ratio of 1: 1, inclining the TiO2 film about 30 DEG to soak in the mixed solution, standing in a dark place for 1.5-7h at 25-80 DEG C, taking out and wash