Reverse conducting insulated gate bipolar transistor (RC-IGBT) and manufacturing method thereof

• Main Authors: TIAN XIAOLI, LU SHUOJIN, TENG YUAN, ZHU YANGJUN
• Format: Patent
• Language: Chinese; English
• Published: 08.03.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides an RC-IGBT and a manufacturing method thereof. The manufacturing method comprises a substrate including a drift region is provided; a well region is formed in the upper surface of the substrate; a source region is formed in the well region; a collecting zone is formed in the lower surface of the substrate; a front side electrode structure and a back side electrode structure are formed; and carrier life control is carried out on the drift region to reduce the carrier life of the drift region. According to the manufacturing method, carrier life control is carried out on the drift region to reduce the carrier life of the drift region, when an RFD is converted from forward biasing to reverse biasing, carriers injected to the drift region 11 can be combined rapidly, the power-off speed is improved, and further the switching speed is improved. 本发明提供公开了种RC-IGBT及其制作方法，该制作方法包括：提供衬底，所述衬底具有漂移区；在所述衬底上表面内形成阱区；在所述阱区内形成源区；在所述衬底下表面内形成集电区；形成正面电极结构以及背面电极结构；对所述漂移区进行载流子寿命控制，降低所述漂移区的载流子寿命。所述制作方法通过对漂移区进行载流子寿