Method for mounting primary heater in Czochralski single crystal production

• Main Authors: SUN YUAN, ZHU QINFA, HUANG LONGHUI, LIU DALI, CHANG LIN, ZHAO YINGUANG
• Format: Patent
• Language: Chinese; English
• Published: 08.03.2017
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The invention discloses a method for mounting a primary heater in Czochralski single crystal production. According to the method, the primary heater is connected with an electrode in a mode of direct embedment. Contact surfaces of the primary heater and the electrode are processed into a vertical wall shape, wherein an inclined structure is processed at the upper part of one side of the contact surface of the primary heater; an inclined structure is also processed at the upper part of a corresponding side face in an inner surface of the electrode; and after the primary heater and the electrode are assembled, the outer surface of the primary heater fits closely with the inner surface of the electrode by use of the gravity of the primary heater. The mounting efficiency and the structural stability of the primary heater in the Czochralski single crystal production are improved. According to the method disclosed by the invention, the primary heater and the electrode are simple, convenient and efficient to connect