A semiconductor device and a fabrication method thereof

• Main Authors: CHING KUONG, LEUNG YING-KEUNG, TSAI CHING-WEI
• Format: Patent
• Language: Chinese; English
• Published: 01.03.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a s semiconductor device and a fabrication method thereof. The method of semiconductor fabrication that includes providing a plurality of fins extending from a substrate is described. Each of the plurality of fins has a top surface and two opposing lateral sidewalls. A gate structure is formed over a first region of each of the plurality of fins and interfaces the top surface and the two opposing lateral sidewalls. A source/drain epitaxial feature is formed on a second region of each of the plurality of fins. The source/drain epitaxial feature interfaces the top surface and the two opposing lateral sidewalls. An air gap is provided which is defined by at least one surface of the source/drain epitaxial feature. A finned field-effect transistor device with channels is formed to achieve improved mobility and / or improved fin profile, thereby enhancing the performance of the fin-effect field-effect transistor device. 本发明公开种半导体装置及其制造方法，半导体制造方法包括提供自基板延伸的多个鳍片。多个鳍片中的每者具有顶表面及两个相对横向侧壁。在多个鳍片中的每者