Methods for constructing three dimensional (3d) integrated circuits (ICs) (3DICs) and related systems
Methods for constructing three dimensional integrated circuits and related systems are disclosed. In one aspect, a first tier is constructed by creating active elements such as transistors on a holding substrate. An interconnection metal layer is created above the active elements. Metal bonding pads...
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Main Authors | , |
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Format | Patent |
Language | Chinese English |
Published |
22.02.2017
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Subjects | |
Online Access | Get full text |
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Summary: | Methods for constructing three dimensional integrated circuits and related systems are disclosed. In one aspect, a first tier is constructed by creating active elements such as transistors on a holding substrate. An interconnection metal layer is created above the active elements. Metal bonding pads are created within the interconnection metal layer. A second tier is also created, either concurrently or sequentially. The second tier is created in much the same manner as the first tier and is then placed on the first tier, such that the respective metal bonding pads align and are bonded one tier to the other. The holding substrate of the second tier is then released. A back side of the second tier is then thinned, such that the back surfaces of the active elements (for example, a back of a gate in a transistor) are exposed. Additional tiers may be added if desired essentially repeating this process.
本发明揭示用于构造三维集成电路和相关系统的方法。在个方面中,通过在固持衬底上形成例如晶体管的有源元件来构造第层。在所述有源元件上方形成互连金属层。在所述互连金属层内形成金属接合垫。还同时或依序地形成第二层。所述第二层与所述第 |
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Bibliography: | Application Number: CN201580026517 |