Ag alloy sputtering target and Ag alloy film manufacturing method

• Main Authors: SHIONO ICHIRO, TOSHIMORI YUTO, KOMIYAMA SHOZO
• Format: Patent
• Language: Chinese; English
• Published: 15.02.2017
• Subjects: ALLOYS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; FERROUS OR NON-FERROUS ALLOYS; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TREATMENT OF ALLOYS OR NON-FERROUS METALS

Provided is a Ag alloy sputtering target characterized in having a composition containing one or more elements selected from Cu, Sn, Sb, Mg, In and Ti with the total being in the range of 0.1 atom% to 15.0 atom% and also containing S in the range of 0.5 atom ppm to 200 atom ppm, the balance being obtained from Ag and unavoidable impurities. 本发明提供种Ag合金溅射靶，其特征在于，所述Ag合金溅射靶为如下组分：以总计0.1原子％以上且15.0原子％以下的范围含有选自Cu、Sn、Sb、Mg、In、Ti中的种或两种以上的元素，进步以0.5原子ppm以上且200原子ppm以下的范围含有S，且剩余部分由Ag及不可避免的杂质构成。